 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMIX302GAR12E4S Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF SEMIX302GAR12E4S Conditions Values 1200 Unit V A A A A V s C A A A A A C A A A A A C A C V Tj = 175 C Tc = 25 C Tc = 80 C 463 356 300 900 -20 ... 20 SEMiX(R)2s Trench IGBT Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 356 266 300 900 1620 -40 ... 175 IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C Tj = 175 C Tc = 25 C Tc = 80 C 356 266 300 900 1620 -40 ... 175 Typical Applications * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 18.6 1.16 1.02 1700 2.50 1.8 2.2 0.8 0.7 3.3 5.0 5.8 0.1 2.05 2.4 0.9 0.8 3.8 5.3 6.5 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAR (c) by SEMIKRON Rev. 1 - 20.02.2009 1 SEMIX302GAR12E4S Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions VCC = 600 V IC = 300 A Tj = 150 C Tj = 150 C Tj = 150 C min. typ. 282 60 30 564 117 44 max. Unit ns ns mJ ns ns mJ RG on = 1.9 Tj = 150 C RG off = 1.9 di/dton = 5000 A/s Tj = 150 C di/dtoff = 2800 A/s Tj = 150 C per IGBT Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 1.1 0.7 2.2 3.3 1.1 0.7 2.2 3.3 0.096 2.1 2.1 1.3 0.9 2.8 3.9 230 50 19 0.17 2.1 2.1 1.3 0.9 2.8 3.9 230 50 19 0.17 18 2.5 2.4 1.5 1.1 3.2 4.3 2.46 2.4 1.5 1.1 3.2 4.3 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W nH m m K/W SEMiX 2s Trench IGBT Modules SEMIX302GAR12E4S (R) Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.045 5 5 250 Nm Nm Nm g K Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% GAR 2 Rev. 1 - 20.02.2009 (c) by SEMIKRON SEMIX302GAR12E4S Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 1 - 20.02.2009 3 SEMIX302GAR12E4S Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 - 20.02.2009 (c) by SEMIKRON SEMIX302GAR12E4S SEMiX 2s GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 1 - 20.02.2009 5 |
Price & Availability of SEMIX302GAR12E4S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |